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1. – Память MSUNG – Memory (K)
2. – тип памяти DRAM - (4)
3. – Краткая классификация - Small Classification
N - gDDR2 SDRAM
W - gDDR3 SDRAM
J - GDDR3 SDRAM
G - GDDR5 SDRAM
4. – Плотность, регенерация - Density, Refresh
51 - 512M, 8K/64ms
52 - 512M, 8K/32ms
54 - 256M, 16K/16ms
55 - 256M, 4K/32ms
56 - 256M, 8K/64ms
62 - 64M, 2K/16ms
64 - 64M, 4K/64ms
10 - 1G, 8K/32ms
1G - 1G, 8K/64ms
5. – Организация - Organization
16 - x16
32 - x32
6. - Bank
3 - 4Bank
4 - 8Bank
7. – Интерфейс, напряжения питания - Interface, VDD, VDDQ
5 – SSTL 2, 1.8V, 1.8V, LP
6 – SSTL 15, 1.5V, 1.5V
Q – SSTL 2, 1.8V, 1.8V
F – POD 15, 1.5V, 1.5V
K - POD 18, 1.8V, 1.8V
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8. Ревизия – (Поколение – Generation)
M – 1st Gen.
В – 3rd Gen.
D – 5th Gen.
F – 7th Gen.
H – 9th Gen.
Q – 17th Gen.
A – 2nd Gen.
С – 4th Gen.
E – 6th Gen.
G – 8th Gen.
I – 10th Gen.
Z – 26th Gen.
9 – Корпусировка – Package
Z – 84 FBGA (без свинца)
A – 136 FBGA (содержит свинец)
В – 136 FBGA (без свинца)
H – FBGA (без галогенов и свинца)
E – 100 FBGA (без галогенов и свинца)
10. – Temperature & Power (VDD)
С – Commercial Normal
J – Commercial High
L – Commercial Low
11. – Speed (Wafer/Chip Biz/BGD : 0)
04 – 0.4ns (2500MHz)(5.0Gbps)
05 – 0.5ns (2000MHz)(4.0Gbps)
5C –0.56ns (1800MHz)(3.6Gbps)
06 – 0.62ns (1600MHz)(3.2Gbps)
6A – 0.66ns (1500MHz)(3.0Gbps)
07 – 0.71ns (1400MHz)(2.8Gbps)
7A –0.77ns (1300MHz)(2.6Gbps)
08 – 0.8ns (1200MHz)(2.4Gbps)
09 – 0.9ns (1100MHz)(2.2Gbps)
1A – 1.0ns (1000MHz)(2.0Gbps)
11 – 1.1ns (900MHz)(1.8Gbps)
12 – 1.25ns (800MHz)(1.6Gbps)
14 – 1.4ns (700MHz)(1.4Gbps)
15 –1.5ns (667MHz)(1.3Gbps)
16 – 1.66ns (600MHz)(1.2Gbps)
18 – 1.8ns (550MHz)(1.1 Gbps)
20 – 2.0ns (500MHz)(1.0Gbps)
22 – 2.2ns (450MHz)(0.9Gbps)
25 – 2.5ns (400MHz)(0.8Gbps)
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